SPA17N80C3XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 17A TO220-3
$5.94
Available to order
Reference Price (USD)
1+
$6.00000
10+
$5.39100
100+
$4.48380
500+
$3.69714
1,000+
$3.17265
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SPA17N80C3XKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SPA17N80C3XKSA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-31
- Package / Case: TO-220-3 Full Pack
Related Products
NXP USA Inc.
ON5441518
Vishay Siliconix
SUM70101EL-GE3
Renesas Electronics America Inc
2SK1589-T1B-AT
Microchip Technology
APT43F60B2
IXYS
IXFN52N100X
Vishay Siliconix
IRLR014PBF
Goford Semiconductor
G15N10C
onsemi
MCH6341-TL-H
Fairchild Semiconductor
HUF75925D3ST
Microchip Technology