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APT9M100S

Microchip Technology
APT9M100S Preview
Microchip Technology
MOSFET N-CH 1000V 9A D3PAK
$6.16
Available to order
Reference Price (USD)
1+
$6.16000
500+
$6.0984
1000+
$6.0368
1500+
$5.9752
2000+
$5.9136
2500+
$5.852
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2605 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 335W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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