SIUD412ED-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 12V 500MA PPAK 0806
$0.41
Available to order
Reference Price (USD)
3,000+
$0.07469
6,000+
$0.06532
15,000+
$0.05595
30,000+
$0.05282
75,000+
$0.04970
150,000+
$0.04345
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SIUD412ED-T1-GE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SIUD412ED-T1-GE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 0806
- Package / Case: PowerPAK® 0806
Related Products
Infineon Technologies
AUIRFR5305
Texas Instruments
CSD17304Q3
Vishay Siliconix
SI7464DP-T1-GE3
IXYS
IXFR48N60P
Panjit International Inc.
PJD40N15_L2_00001
Diodes Incorporated
DMN10H220L-7
Toshiba Semiconductor and Storage
TK7J90E,S1E
Vishay Siliconix
IRFR9024TRLPBF
EPC
EPC2022
Infineon Technologies