TK7J90E,S1E
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 900V 7A TO3P
$2.83
Available to order
Reference Price (USD)
1+
$2.70000
25+
$2.17760
100+
$1.95980
500+
$1.52426
1,000+
$1.26295
2,500+
$1.21940
Exquisite packaging
Discount
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Enhance your circuit performance with TK7J90E,S1E, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust TK7J90E,S1E for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)
- Package / Case: TO-3P-3, SC-65-3
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