SISS98DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 14.1A PPAK
$1.13
Available to order
Reference Price (USD)
3,000+
$0.50922
6,000+
$0.48531
15,000+
$0.46823
Exquisite packaging
Discount
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Vishay Siliconix presents SISS98DN-T1-GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SISS98DN-T1-GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 105mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 7.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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