LSIC1MO120G0040
Littelfuse Inc.

Littelfuse Inc.
MOSFET SIC 1200V 50A TO247-4L
$30.62
Available to order
Reference Price (USD)
1+
$30.62000
500+
$30.3138
1000+
$30.0076
1500+
$29.7014
2000+
$29.3952
2500+
$29.089
Exquisite packaging
Discount
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Discover high-performance LSIC1MO120G0040 from Littelfuse Inc., a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, LSIC1MO120G0040 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 4V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 20 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 317 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4