SIRA52ADP-T1-RE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 41.6A/131A PPAK
$1.50
Available to order
Reference Price (USD)
3,000+
$0.67978
6,000+
$0.64786
15,000+
$0.62507
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SIRA52ADP-T1-RE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SIRA52ADP-T1-RE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 131A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 4.8W (Ta), 48W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Vishay Siliconix
IRFD113PBF
Alpha & Omega Semiconductor Inc.
AOT2142L
Vishay Siliconix
IRFZ48RPBF
Rohm Semiconductor
RJU003N03FRAT106
Taiwan Semiconductor Corporation
TSM4N90CZ C0G
Taiwan Semiconductor Corporation
TSM10NC65CF C0G
IXYS
IXFP26N30X3
Vishay Siliconix
SIA447DJ-T1-GE3
Nexperia USA Inc.
PMV100EPAR
Fairchild Semiconductor