TSM4N90CZ C0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 900V 4A TO220
$1.79
Available to order
Reference Price (USD)
1+
$1.80000
10+
$1.62700
100+
$1.30730
500+
$1.01676
1,000+
$0.84245
3,000+
$0.81340
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with TSM4N90CZ C0G by Taiwan Semiconductor Corporation, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, TSM4N90CZ C0G ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 38.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Taiwan Semiconductor Corporation
TSM10NC65CF C0G
IXYS
IXFP26N30X3
Vishay Siliconix
SIA447DJ-T1-GE3
Nexperia USA Inc.
PMV100EPAR
Fairchild Semiconductor
FQI4N80TU
onsemi
FDP4D5N10C
Rohm Semiconductor
RTF015P02TL
Sanken
2SK3800
Infineon Technologies
BSC010N04LSATMA1
Rohm Semiconductor