SIR680LDP-T1-RE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 80V 31.8A/130A PPAK
$2.45
Available to order
Reference Price (USD)
1+
$2.45000
500+
$2.4255
1000+
$2.401
1500+
$2.3765
2000+
$2.352
2500+
$2.3275
Exquisite packaging
Discount
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Optimize your electronic systems with SIR680LDP-T1-RE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SIR680LDP-T1-RE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 31.8A (Ta), 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7250 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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