SI1467DH-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 2.7A SC70-6
$0.70
Available to order
Reference Price (USD)
3,000+
$0.28815
6,000+
$0.26945
15,000+
$0.26010
30,000+
$0.25500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SI1467DH-T1-GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SI1467DH-T1-GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
Related Products
Nexperia USA Inc.
PSMNR55-40SSHJ
STMicroelectronics
STF3NK100Z
NXP USA Inc.
BUK6507-55C,127
IXYS
IXFN160N30T
Alpha & Omega Semiconductor Inc.
AON2405
Renesas Electronics America Inc
2SK1519-E
Diodes Incorporated
DMN601WKQ-7
onsemi
2V7002WT1G
Infineon Technologies
IPP60R280C6XKSA1
onsemi