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SIR576DP-T1-RE3

Vishay Siliconix
SIR576DP-T1-RE3 Preview
Vishay Siliconix
N-CHANNEL 150 V (D-S) MOSFET POW
$1.47
Available to order
Reference Price (USD)
1+
$1.47000
500+
$1.4553
1000+
$1.4406
1500+
$1.4259
2000+
$1.4112
2500+
$1.3965
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 75 V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8

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