SIHP6N40D-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 400V 6A TO220AB
$1.19
Available to order
Reference Price (USD)
1+
$1.26000
10+
$1.11800
100+
$0.88400
500+
$0.68552
1,000+
$0.54120
3,000+
$0.50512
5,000+
$0.47986
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SIHP6N40D-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SIHP6N40D-GE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Panjit International Inc.
PJE138L_R1_00001
onsemi
NTD70N03RT4
STMicroelectronics
STU9HN65M2
Nexperia USA Inc.
PSMN6R0-25YLB,115
onsemi
NTLUS029N06T6TAG
Texas Instruments
CSD17581Q3AT
onsemi
NVMFS6H818NLWFT1G
Nexperia USA Inc.
BSP250,135
Fairchild Semiconductor
FQI15P12TU
Infineon Technologies