IPSA70R600CEAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 10.5A TO251-3
$0.42
Available to order
Reference Price (USD)
1+
$1.09000
10+
$0.95600
100+
$0.73770
500+
$0.54648
1,000+
$0.43718
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IPSA70R600CEAKMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPSA70R600CEAKMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 210µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 86W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Taiwan Semiconductor Corporation
TSM1NB60CW RPG
Vishay Siliconix
SQD100N03-3M4_GE3
Vishay Siliconix
SQJA34EP-T1_GE3
Infineon Technologies
BSC016N06NSTATMA1
Panjit International Inc.
PJA3438-AU_R1_000A1
IXYS
IXTP32N65X
Diodes Incorporated
DMT68M8LFV-7
Nexperia USA Inc.
PMV40UN2R
Diodes Incorporated
DMP1009UFDFQ-13
Wolfspeed, Inc.