SIHG80N60E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 80A TO247AC
$12.53
Available to order
Reference Price (USD)
1+
$13.67000
10+
$12.48000
100+
$10.68920
500+
$9.19708
1,000+
$8.48084
Exquisite packaging
Discount
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Discover high-performance SIHG80N60E-GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SIHG80N60E-GE3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 443 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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