TK25S06N1L,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 25A DPAK
$0.41
Available to order
Reference Price (USD)
1+
$0.41426
500+
$0.4101174
1000+
$0.4059748
1500+
$0.4018322
2000+
$0.3976896
2500+
$0.393547
Exquisite packaging
Discount
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Enhance your circuit performance with TK25S06N1L,LQ, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust TK25S06N1L,LQ for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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