SIHG33N60E-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 33A TO247AC
$4.33
Available to order
Reference Price (USD)
500+
$4.32762
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SIHG33N60E-E3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SIHG33N60E-E3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
onsemi
NTB011N15MC
Goford Semiconductor
GT110N06S
Infineon Technologies
IPI50N12S3L15AKSA1
Infineon Technologies
IPB65R075CFD7AATMA1
Infineon Technologies
IPT65R080CFD7XTMA1
Rohm Semiconductor
R6006KNXC7G
Diodes Incorporated
DMP3045LFVW-13
Renesas Electronics America Inc
2SJ361RYTR-E
Fairchild Semiconductor
FDMS0308CS
IXYS