NTB011N15MC
onsemi
onsemi
NTB011N15MC
$4.71
Available to order
Reference Price (USD)
1+
$4.71000
500+
$4.6629
1000+
$4.6158
1500+
$4.5687
2000+
$4.5216
2500+
$4.4745
Exquisite packaging
Discount
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Boost your electronic applications with NTB011N15MC, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, NTB011N15MC meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 75.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 10.9mOhm @ 41A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 223µA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 136.4W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK-3 (TO-263-3)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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