2SK2512-AZ
Renesas Electronics America Inc
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
$2.48
Available to order
Reference Price (USD)
1+
$2.48000
500+
$2.4552
1000+
$2.4304
1500+
$2.4056
2000+
$2.3808
2500+
$2.356
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with 2SK2512-AZ, a reliable Transistors - FETs, MOSFETs - Single by Renesas Electronics America Inc. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, 2SK2512-AZ meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Panjit International Inc.
PJS6421_S1_00001
Infineon Technologies
SPB42N03S2L-13
NXP USA Inc.
BSH205,215
onsemi
HUF76629D3ST
Vishay Siliconix
SIR165DP-T1-GE3
Infineon Technologies
BUZ31H3046XKSA1
Fairchild Semiconductor
FDB8442
Texas Instruments
CSD17578Q5A
Infineon Technologies
IPL60R360P6SATMA1
Infineon Technologies