SIHG052N60EF-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 48A TO247AC
$7.06
Available to order
Reference Price (USD)
1+
$7.06000
500+
$6.9894
1000+
$6.9188
1500+
$6.8482
2000+
$6.7776
2500+
$6.707
Exquisite packaging
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Experience the power of SIHG052N60EF-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SIHG052N60EF-GE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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