IRLML0060TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 2.7A SOT23
$0.51
Available to order
Reference Price (USD)
3,000+
$0.17805
6,000+
$0.16828
15,000+
$0.15851
30,000+
$0.14679
75,000+
$0.14190
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IRLML0060TRPBF by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IRLML0060TRPBF inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 92mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro3™/SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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