SIHB22N60E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 21A D2PAK
$4.31
Available to order
Reference Price (USD)
1+
$4.71000
10+
$4.21800
100+
$3.48540
500+
$2.85048
1,000+
$2.42720
3,000+
$2.31324
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SIHB22N60E-GE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SIHB22N60E-GE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Microchip Technology
APT34M120J
GeneSiC Semiconductor
G3R350MT12D
IXYS
IXFP72N20X3M
Alpha & Omega Semiconductor Inc.
AOTF9N50
Fairchild Semiconductor
RFP8P10
Vishay Siliconix
SIS415DNT-T1-GE3
Central Semiconductor Corp
CMLDM8120G TR PBFREE
Vishay Siliconix
IRFZ48SPBF
Diodes Incorporated
DMN3025LFV-7
Taiwan Semiconductor Corporation