TSM4NB60CI C0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 600V 4A ITO220AB
$2.73
Available to order
Reference Price (USD)
1+
$0.96000
10+
$0.85400
100+
$0.67500
500+
$0.52346
1,000+
$0.41325
3,000+
$0.38570
Exquisite packaging
Discount
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Boost your electronic applications with TSM4NB60CI C0G, a reliable Transistors - FETs, MOSFETs - Single by Taiwan Semiconductor Corporation. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, TSM4NB60CI C0G meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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