SIHB21N80AE-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 17.4A D2PAK
$3.04
Available to order
Reference Price (USD)
1+
$3.04000
500+
$3.0096
1000+
$2.9792
1500+
$2.9488
2000+
$2.9184
2500+
$2.888
Exquisite packaging
Discount
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Upgrade your electronic designs with SIHB21N80AE-GE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SIHB21N80AE-GE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 32W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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