SIB422EDK-T4-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 7.1A/9A PPAK
$0.21
Available to order
Reference Price (USD)
1+
$0.21176
500+
$0.2096424
1000+
$0.2075248
1500+
$0.2054072
2000+
$0.2032896
2500+
$0.201172
Exquisite packaging
Discount
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Vishay Siliconix presents SIB422EDK-T4-GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SIB422EDK-T4-GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-75-6
- Package / Case: PowerPAK® SC-75-6
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