NVMFS5831NLWFT1G
onsemi
onsemi
T2 40V LL, SINGLE NCH, SO-8FL 2.
$0.96
Available to order
Reference Price (USD)
1+
$0.96418
500+
$0.9545382
1000+
$0.9448964
1500+
$0.9352546
2000+
$0.9256128
2500+
$0.915971
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NVMFS5831NLWFT1G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NVMFS5831NLWFT1G inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 161A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4946 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 143W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
- Package / Case: 8-PowerTDFN, 5 Leads
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