SIA462DJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 12A PPAK SC70-6
$0.43
Available to order
Reference Price (USD)
3,000+
$0.16245
6,000+
$0.15255
15,000+
$0.14265
30,000+
$0.13572
75,000+
$0.13500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SIA462DJ-T1-GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SIA462DJ-T1-GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6 Single
- Package / Case: PowerPAK® SC-70-6
Related Products
NXP USA Inc.
PSMN3R3-80ES,127
Infineon Technologies
IRF6620TRPBF
Fairchild Semiconductor
FDMS2506SDC
Texas Instruments
CSD17305Q5A
IXYS
IXTA110N055T2-TRL
UnitedSiC
UF3C065080B7S
Vishay Siliconix
SIHB125N60EF-GE3
Infineon Technologies
IPC50N04S55R8ATMA1
Infineon Technologies
BSC009NE2LS5ATMA1
IXYS