UF3C065080B7S
UnitedSiC
UnitedSiC
SICFET N-CH 650V 27A D2PAK-7
$9.63
Available to order
Reference Price (USD)
1+
$9.63000
500+
$9.5337
1000+
$9.4374
1500+
$9.3411
2000+
$9.2448
2500+
$9.1485
Exquisite packaging
Discount
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Enhance your circuit performance with UF3C065080B7S, a premium Transistors - FETs, MOSFETs - Single from UnitedSiC. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust UF3C065080B7S for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 136.4W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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