SIA456DJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 2.6A PPAK SC70
$0.98
Available to order
Reference Price (USD)
3,000+
$0.41580
6,000+
$0.39501
15,000+
$0.38016
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with SIA456DJ-T1-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SIA456DJ-T1-GE3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6
- Package / Case: PowerPAK® SC-70-6
Related Products
Panjit International Inc.
PJS6407_S1_00001
Vishay Siliconix
IRF820LPBF
Vishay Siliconix
SUM90140E-GE3
NTE Electronics, Inc
NTE455
STMicroelectronics
STB22N60M6
Fairchild Semiconductor
FQP6N25
onsemi
FDB9403-F085
Infineon Technologies
SPD04N80C3ATMA1
Nexperia USA Inc.
NX138AKR
Diodes Incorporated