STB22N60M6
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 15A D2PAK
$3.35
Available to order
Reference Price (USD)
1+
$3.35000
500+
$3.3165
1000+
$3.283
1500+
$3.2495
2000+
$3.216
2500+
$3.1825
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of STB22N60M6, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, STB22N60M6 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Fairchild Semiconductor
FQP6N25
onsemi
FDB9403-F085
Infineon Technologies
SPD04N80C3ATMA1
Nexperia USA Inc.
NX138AKR
Diodes Incorporated
DMP2018LFK-7
Infineon Technologies
IPB22N03S4L-15
IXYS
IXTT12N150
Sanyo
2SK3815-DL-E
Nexperia USA Inc.
BUK7M9R9-60EX
Sanken