SI8466EDB-T2-E1
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 8V 4MICROFOOT
$0.53
Available to order
Reference Price (USD)
3,000+
$0.19855
6,000+
$0.18645
15,000+
$0.17435
30,000+
$0.16588
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with SI8466EDB-T2-E1, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SI8466EDB-T2-E1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-UFBGA, WLCSP
Related Products
onsemi
NTD65N03R-1G
Infineon Technologies
AUIRF1404ZSTRL
Diodes Incorporated
DMN3730UFB4-7B
Rectron USA
RM50N60LD
IXYS Integrated Circuits Division
CPC3980ZTR
Infineon Technologies
IPW65R080CFDFKSA2
Texas Instruments
CSD17313Q2
Infineon Technologies
IAUC100N04S6L014ATMA1
Infineon Technologies
BSC090N03LSGATMA1
onsemi