SI8429DB-T1-E1
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 8V 11.7A 4MICROFOOT
$1.09
Available to order
Reference Price (USD)
3,000+
$0.46200
6,000+
$0.43890
15,000+
$0.42240
Exquisite packaging
Discount
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Experience the power of SI8429DB-T1-E1, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SI8429DB-T1-E1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8 V
- Current - Continuous Drain (Id) @ 25°C: 11.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 2.77W (Ta), 6.25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-XFBGA, CSPBGA
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