IPP023N08N5AKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 120A TO220-3
$5.35
Available to order
Reference Price (USD)
500+
$2.79086
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IPP023N08N5AKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPP023N08N5AKSA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 208µA
- Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IPP083N10N5AKSA1
onsemi
NTMFS6H818NT1G
Infineon Technologies
IRFU3910PBF
onsemi
FDD16AN08A0
Rohm Semiconductor
RXH100N03TB1
Toshiba Semiconductor and Storage
TK90S06N1L,LQ
Goford Semiconductor
GC20N65F
Fairchild Semiconductor
FDI8441
onsemi
2SK4066-DL-E
Infineon Technologies