SI8416DB-T2-E1
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 8V 16A 6MICRO FOOT
$0.74
Available to order
Reference Price (USD)
3,000+
$0.28710
6,000+
$0.26730
15,000+
$0.25740
30,000+
$0.25200
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SI8416DB-T2-E1 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SI8416DB-T2-E1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-Micro Foot™ (1.5x1)
- Package / Case: 6-UFBGA
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