SI7911DN-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET 2P-CH 20V 4.2A 1212-8
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Boost your project s performance with Vishay Siliconix s SI7911DN-T1-E3, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, SI7911DN-T1-E3 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of SI7911DN-T1-E3.
Specifications
- Product Status: Obsolete
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.2A
- Rds On (Max) @ Id, Vgs: 51mOhm @ 5.7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.3W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® 1212-8 Dual
- Supplier Device Package: PowerPAK® 1212-8 Dual
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