SI7852ADP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 80V 30A PPAK SO-8
$2.36
Available to order
Reference Price (USD)
3,000+
$0.94926
6,000+
$0.91632
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SI7852ADP-T1-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SI7852ADP-T1-GE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
onsemi
ATP404-H-TL-H
Nexperia USA Inc.
BUK7D25-40EX
Rohm Semiconductor
SCT3017ALHRC11
Infineon Technologies
AUIRFS4010TRL
Vishay Siliconix
SQJ401EP-T1_GE3
Alpha & Omega Semiconductor Inc.
AOT7N65
Panjit International Inc.
PJD4NA90_L2_00001
Rohm Semiconductor
R6030ENXC7G
Diodes Incorporated
DMP2104LP-7
Infineon Technologies