SCT3017ALHRC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 650V 118A TO247N
$131.29
Available to order
Reference Price (USD)
1+
$104.16000
10+
$98.78800
25+
$96.10000
100+
$94.08390
Exquisite packaging
Discount
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Discover high-performance SCT3017ALHRC11 from Rohm Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SCT3017ALHRC11 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 23.5mA
- Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 427W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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