SI5902BDC-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 30V 4A 1206-8
$1.38
Available to order
Reference Price (USD)
3,000+
$0.62320
6,000+
$0.59394
15,000+
$0.57304
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI5902BDC-T1-GE3 by Vishay Siliconix is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Vishay Siliconix s SI5902BDC-T1-GE3 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
- Power - Max: 3.12W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
Related Products
Diodes Incorporated
DMP2004DMK-7
Alpha & Omega Semiconductor Inc.
AO4838
Toshiba Semiconductor and Storage
SSM6N58NU,LF
Diodes Incorporated
DMNH6065SSD-13
Rohm Semiconductor
HS8K11TB
Infineon Technologies
IPA126N10N3G
Vishay Siliconix
SI7220DN-T1-E3
onsemi
FDG6320C
Fairchild Semiconductor
FQB12N50TM
Wolfspeed, Inc.