HS8K11TB
Rohm Semiconductor
Rohm Semiconductor
MOSFET 2N-CH 30V 7A/11A HSML
$0.66
Available to order
Reference Price (USD)
3,000+
$0.21700
6,000+
$0.20300
15,000+
$0.19600
Exquisite packaging
Discount
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Upgrade your electronic designs with Rohm Semiconductor s HS8K11TB, a top-tier choice in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. Known for their durability and high efficiency, these components are essential for modern electronics. Key features include robust construction, low on-resistance, and fast switching capabilities. Ideal for use in power supplies, motor control, and audio amplifiers. Reach out to us now to learn more about how HS8K11TB can meet your specific needs and boost your application performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A, 11A
- Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-UDFN Exposed Pad
- Supplier Device Package: HSML3030L10
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