SI4909DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2P-CH 40V 8A 8SO
$1.09
Available to order
Reference Price (USD)
2,500+
$0.49200
5,000+
$0.46890
12,500+
$0.45240
Exquisite packaging
Discount
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The SI4909DY-T1-GE3 by Vishay Siliconix is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Vishay Siliconix s SI4909DY-T1-GE3 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 27mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
- Power - Max: 3.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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