FDMS3660S
onsemi
onsemi
MOSFET 2N-CH 30V 30A/60A POWER56
$1.67
Available to order
Reference Price (USD)
3,000+
$0.56734
6,000+
$0.53897
15,000+
$0.51871
Exquisite packaging
Discount
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Boost your project s performance with onsemi s FDMS3660S, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, FDMS3660S provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of FDMS3660S.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A, 60A
- Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: Power56
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