SI4434DY-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 250V 2.1A 8SO
$3.14
Available to order
Reference Price (USD)
2,500+
$1.26451
5,000+
$1.22063
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SI4434DY-T1-E3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SI4434DY-T1-E3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
SIHA22N60EL-GE3
Toshiba Semiconductor and Storage
TPWR7904PB,L1XHQ
Vishay Siliconix
SIHG17N80AEF-GE3
Fairchild Semiconductor
FQPF2N90
Infineon Technologies
AUIRFSA8409-7P
STMicroelectronics
STL320N4LF8
Diodes Incorporated
DMN2320UFB4-7B
Infineon Technologies
IPD60R145CFD7ATMA1
Fairchild Semiconductor
FQP7N80
Diodes Incorporated