FQPF2N90
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 900V 1.4A TO220F
$1.20
Available to order
Reference Price (USD)
1+
$1.20000
500+
$1.188
1000+
$1.176
1500+
$1.164
2000+
$1.152
2500+
$1.14
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with FQPF2N90, a reliable Transistors - FETs, MOSFETs - Single by Fairchild Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, FQPF2N90 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.2Ohm @ 700mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3
- Package / Case: TO-220-3 Full Pack
Related Products
Infineon Technologies
AUIRFSA8409-7P
STMicroelectronics
STL320N4LF8
Diodes Incorporated
DMN2320UFB4-7B
Infineon Technologies
IPD60R145CFD7ATMA1
Fairchild Semiconductor
FQP7N80
Diodes Incorporated
2N7002EQ-7-F
Nexperia USA Inc.
PSMN013-30YLC,115
STMicroelectronics
STL13N60M2
Infineon Technologies
IPU50R950CEBTMA1
Rectron USA