SI3443CDV-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 5.97A 6TSOP
$0.65
Available to order
Reference Price (USD)
3,000+
$0.24368
6,000+
$0.22883
15,000+
$0.21398
30,000+
$0.20358
Exquisite packaging
Discount
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Boost your electronic applications with SI3443CDV-T1-E3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SI3443CDV-T1-E3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5.97A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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