TW083N65C,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
G3 650V SIC-MOSFET TO-247 83MOH
$13.40
Available to order
Reference Price (USD)
1+
$13.40000
500+
$13.266
1000+
$13.132
1500+
$12.998
2000+
$12.864
2500+
$12.73
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Toshiba Semiconductor and Storage presents TW083N65C,S1F, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, TW083N65C,S1F delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 113mOhm @ 15A, 18V
- Vgs(th) (Max) @ Id: 5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 111W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
Related Products
onsemi
FCPF9N60NT
Alpha & Omega Semiconductor Inc.
AO6424
Diodes Incorporated
ZXMP4A16KTC
onsemi
FDMC2610
STMicroelectronics
STP20NM50
Renesas Electronics America Inc
RJK60S5DPP-E0#T2
Renesas Electronics America Inc
NP32N055SHE-E1-AY
Diodes Incorporated
DMN2055U-13
Infineon Technologies
SPD50N03S2-07G
Diodes Incorporated