SD213DE TO-72 4L
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
HIGH SPEED N-CHANNEL LATERAL DMO
$5.63
Available to order
Reference Price (USD)
1+
$5.63000
500+
$5.5737
1000+
$5.5174
1500+
$5.4611
2000+
$5.4048
2500+
$5.3485
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SD213DE TO-72 4L by Linear Integrated Systems, Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SD213DE TO-72 4L inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 10 V
- Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 25V
- Rds On (Max) @ Id, Vgs: 45Ohm @ 1mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-72-4
- Package / Case: TO-206AF, TO-72-4 Metal Can
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