SCTL90N65G2V
STMicroelectronics
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
$39.05
Available to order
Reference Price (USD)
1+
$39.05000
500+
$38.6595
1000+
$38.269
1500+
$37.8785
2000+
$37.488
2500+
$37.0975
Exquisite packaging
Discount
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Experience the power of SCTL90N65G2V, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SCTL90N65G2V is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 18V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 935W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat™ (8x8) HV
- Package / Case: 8-PowerVDFN
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