DMNH6010SCTBQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V TO263 T&R
$1.87
Available to order
Reference Price (USD)
1+
$1.87456
500+
$1.8558144
1000+
$1.8370688
1500+
$1.8183232
2000+
$1.7995776
2500+
$1.780832
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with DMNH6010SCTBQ-13 by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, DMNH6010SCTBQ-13 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 133A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2692 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB (D²PAK)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Diodes Incorporated
DMP3007SCGQ-13
onsemi
MCH3377-S-TL-E
onsemi
NVMFS5C404NWFET1G
Diodes Incorporated
DMP26M7UFG-13
Micro Commercial Co
SIL08N02-TP
Diodes Incorporated
DMTH4007SPS-13
Sanyo
2SK3818-DL-E
Renesas Electronics America Inc
2SK2371(1)-A
Renesas Electronics America Inc
RJK03B7DPA-WS#J53
Harris Corporation