SCT3160KLGC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 17A TO247N
$10.99
Available to order
Reference Price (USD)
1+
$10.19000
10+
$9.20200
30+
$8.77400
120+
$7.61842
270+
$7.27600
510+
$6.63400
1,020+
$5.99200
Exquisite packaging
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Rohm Semiconductor presents SCT3160KLGC11, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SCT3160KLGC11 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 103W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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