SCT3105KW7TL
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 23A TO263-7
$16.38
Available to order
Reference Price (USD)
1+
$16.38000
500+
$16.2162
1000+
$16.0524
1500+
$15.8886
2000+
$15.7248
2500+
$15.561
Exquisite packaging
Discount
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Enhance your circuit performance with SCT3105KW7TL, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SCT3105KW7TL for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 125W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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