BSP225,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 250V 225MA SOT223
$0.70
Available to order
Reference Price (USD)
1,000+
$0.35598
2,000+
$0.32675
5,000+
$0.30727
10,000+
$0.29753
25,000+
$0.29222
Exquisite packaging
Discount
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Discover BSP225,115, a versatile Transistors - FETs, MOSFETs - Single solution from Nexperia USA Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Not For New Designs
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 225mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 15Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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